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参数资料
| 型号： | 70T631S12DDGI |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 |
| 封装： | 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144 |
| 文件页数： | 9/27页 |
| 文件大小： | 220K |
| 代理商： | 70T631S12DDGI |
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17
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and
BUSY (M/S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of the Max. spec, tWDD – tWP (actual), or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. 8ns Commercial and 10ns Industrial speed grades are available in BF-208 and BC-256 packages only.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
Symbol
Parameter
70T633/1S8(6)
Com'l Only
70T633/1S10
Com'l
& Ind(6)
70T633/1S12
Com'l
& Ind
70T633/1S15
Com'l Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
BUSY TIMING (M/S=VIH)
tBAA
BUSY Access Time from Address Match
____
8
____
10
____
12
____
15
ns
tBDA
BUSY Disable Time from Address Not Matched
____
8
____
10
____
12
____
15
ns
tBAC
BUSY Access Time from Chip Enable Low
____
8
____
10
____
12
____
15
ns
tBDC
BUSY Disable Time from Chip Enable High
____
8
____
10
____
12
____
15
ns
tAPS
Arbitration Priority Set-up Time
(2)
2.5
____
2.5
____
2.5
____
2.5
____
ns
tBDD
BUSY Disable to Valid Data(3)
____
8
____
10
____
12
____
15
ns
tWH
Write Hold After
BUSY(5)
6
____
7
____
9
____
12
____
ns
BUSY TIMING (M/S=VIL)
tWB
BUSY Input to Write(4)
0
____
0
____
0
____
0
____
ns
tWH
Write Hold After
BUSY(5)
6
____
7
____
9
____
12
____
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay
(1)
____
12
____
14
____
16
____
20
ns
tDDD
Write Data Valid to Read Data Delay
(1)
____
12
____
14
____
16
____
20
ns
5670 tbl 15
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1,2,3)
Symbol
Parameter
70T633/1S8(4)
Com'l Only
70T633/1S10
Com'l
& Ind
(4)
70T6331S12
Com'l
& Ind
70T633/1S15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
SLEEP MODE TIMING (ZZx=VIH)
tZZS
Sleep Mode Set Time
8
____
10
____
12
____
15
____
tZZR
Sleep Mode Reset Time
8
____
10
____
12
____
15
____
tZZPD
Sleep Mode Power Down Time(5)
8
____
10
____
12
____
15
____
tZZPU
Sleep Mode Power Up Time(5)
____
0
____
0
____
0
____
0
5670 tbl 15a
NOTES:
1. Timing is the same for both ports.
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx, M/S and the sleep mode pins themselves (ZZx) are not affected
during sleep mode. It is recommended that boundary scan not be operated during sleep mode.
3. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
4. 8ns Commercial and 10ns Industrial speed grades are available in BF-208 and BC-256 packages only.
5. This parameter is guaranteed by device characterization, but is not production tested.
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相关代理商/技术参数 |
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|---|---|
| 70T631S15BC | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 2.5V 4M-Bit 256K x 18 15ns 256-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 2.5V 4.5MBIT 256KX18 15NS 256BGA - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:256K X 18 STD-PWR, 2.5V DUAL PORT RAM |
| 70T631S15BC8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 2.5V 4M-Bit 256K x 18 15ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 2.5V 4.5MBIT 256KX18 15NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256K X 18 STD-PWR, 2.5V DUAL PORT RAM |
| 70T631S15BF | 功能描述:静态随机存取存储器 256K X 18 STD-PWR, 2.5V DUAL PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70T631S15BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 2.5V 4M-Bit 256K x 18 15ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 2.5V 4.5MBIT 256KX18 15NS 208FPBGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256K X 18 STD-PWR, 2.5V DUAL PORT RAM |
| 70T633S10BC | 功能描述:静态随机存取存储器 512K X 18 STD-PWR, 2.5V DUAL PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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