参数资料
型号: 70P249L65BYGI
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: SRAM
英文描述: 4K X 16 DUAL-PORT SRAM, 40 ns, PBGA100
封装: 0.50 MM PITCH, GREEN, BGA-100
文件页数: 3/22页
文件大小: 146K
代理商: 70P249L65BYGI
6.42
11
IDT70P269/259/249L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
OCTOBER 16, 2008
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1)
Symbol
Parameter
70P269/259/249
Unit
65 ns
90 ns
Min.
Max.
Min.
Max..
ADM Port Write Cycle
(2)
tWC
Write Cycle Time
65
____
90
____
ns
tSCS
CS Low to Write End
65
____
90
____
ns
tAVD
ADV Low Pulse
15
____
20
____
ns
tAVDS
Address Set-up to
ADV Rising Edge
15
____
20
____
ns
tAVDH
Address Hold from
ADV Rising Edge
3
____
5
____
ns
tCSS
CS Set-up to ADV Rising Edge
7
____
10
____
ns
tWRL
WE Pulse Width
28
____
45
____
ns
tBW
UB/LB Low to Write End
28
____
45
____
ns
tSD
Data Set-up to Write End
20
____
30
____
ns
tHD
Data Hold from Write End
0
____
0
____
ns
tLZWE(3)
WE High to I/O Low-Z
0
____
0
____
ns
tAVWE
ADV High to WE Low
0
____
0
____
ns
tWODR
Write End to ODR Valid
____
40
____
60
ns
Standard Port Write Cycle (4)
tWC
Write Cycle Time
40
____
60
____
ns
tSCS
CS Low to Write End
30
____
50
____
ns
tAW
Address Valid to Write End
30
____
50
____
ns
tHA
Address Hold to Write End
0
____
0
____
ns
tSA
Address Set-up to Write Start
0
____
0
____
ns
tWRL
Write Pulse Width
25
____
45
____
ns
tSD
Data Set-up to Write End
20
____
30
____
ns
tHD
Data Hold from Write End
0
____
0
____
ns
tHZWE
(3)
WE Low to Data High-Z
____
15
____
25
ns
tLZWE(3)
WE High to Data Low-Z
0
____
0
____
ns
tWODR
Write End to ODR Valid
____
40
____
60
ns
7146 tbl 13
NOTES:
1. VDD = 1.8V
2. ADM port timing applies to the left or right port when configured to ADM mode.
3. This parameter is guaranteed by design and is not tested.
4. Standard SRAM port timing applies to the left or right port when configured to standard SRAM mode.
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