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参数资料
| 型号： | 7007L35PF |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 32K X 8 DUAL-PORT SRAM, 35 ns, PQFP80 |
| 封装： | 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-80 |
| 文件页数： | 2/21页 |
| 文件大小： | 168K |
| 代理商： | 7007L35PF |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
10
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
Symbol
Parameter
7007X15
Com'l Only
7007X20
Com'l & Ind
7007X25
Com'l, Ind
& Military
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
15
____
20
____
25
____
ns
tEW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
tHZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
12
____
15
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
2940 tbl 13a
Symbol
Parameter
7007X35
Com'l, Ind
& Military
7007X55
Com'l, Ind
& Military
Unit
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
35
____
55
____
ns
tEW
Chip Enable to End-of-Write
(3)
30
____
45
____
ns
tAW
Address Valid to End-of-Write
30
____
45
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
30
____
ns
tHZ
Output High-Z Time
(1,2)
____
12
____
25
ns
tDH
Data Hold Time(4)
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
12
____
25
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
2940 tbl 13b
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 7007L35PF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 256K-Bit 32K x 8 35ns 80-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 256KBIT 32KX8 35NS 80TQFP - Tape and Reel |
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| 7007L55J8 | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 7007L55PF | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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