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参数资料
| 型号： | 7007L35PF |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 32K X 8 DUAL-PORT SRAM, 35 ns, PQFP80 |
| 封装： | 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-80 |
| 文件页数： | 19/21页 |
| 文件大小： | 168K |
| 代理商： | 7007L35PF |
7
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1) (con't.) (VCC = 5.0V ± 10%)
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA (Typ.)
3. At f = fMAX
, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using
“AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
Symbol
Parameter
Test Condition
Version
7007X35
Com'l, Ind
& Military
7007X55
Com'l, Ind
& Military
Unit
Typ.(2)
Max.
Typ.(2)
Max.
ICC
Dynamic Operating Current
(Both Ports Active)
CE = VIL, Outputs Disabled
SEM = VIH
f = fMAX(3)
COM'L
S
L
160
295
255
150
270
230
mA
MIL &
IND
S
L
160
335
295
150
310
270
ISB1
Standby Current
(Both Ports - TTL Level
Inputs)
CEL = CER = VIH
SEMR = SEML = VIH
f = fMAX
(3)
COM'L
S
L
20
85
60
20
85
60
mA
MIL &
IND
S
L
20
100
80
13
100
80
ISB2
Standby Current
(One Port - TTL Level Inputs)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX
(3)
SEMR = SEML = VIH
COM'L
S
L
95
185
155
85
165
135
mA
MIL &
IND
S
L
95
215
185
85
195
165
ISB3
Full Standby Current (Both
Ports - All CMOS Level
Inputs)
Both Ports
CEL and
CER > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(4)
SEMR = SEML > VCC - 0.2V
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
mA
MIL &
IND
S
L
1.0
0.2
30
10
1.0
0.2
30
10
ISB4
Full Standby Current
(One Port - All CMOS Level
Inputs)
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC - 0.2V
VIN > VCC - 0.2V or VIN < 0.2V
Active Port Outputs Disabled
f = fMAX(3)
COM'L
S
L
90
160
135
80
135
110
mA
MIL &
IND
S
L
90
190
165
80
165
140
2940 tbl 10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 7007L35PF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 256K-Bit 32K x 8 35ns 80-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 256KBIT 32KX8 35NS 80TQFP - Tape and Reel |
| 7007L55J | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 7007L55J8 | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 7007L55PF | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 7007L55PF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 256K-Bit 32K x 8 55ns 80-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 256KBIT 32KX8 55NS 80TQFP - Tape and Reel |
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