- 您现在的位置：买卖IC网 > Datasheet目录369 > W971GG8JB-25 (Winbond Electronics)IC DDR2 SDRAM 1GBIT 60WBGA Datasheet资料下载
参数资料
| 型号： | W971GG8JB-25 |
| 厂商： | Winbond Electronics |
| 文件页数： | 2/87页 |
| 文件大小： | 0K |
| 描述： | IC DDR2 SDRAM 1GBIT 60WBGA |
| 标准包装： | 209 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR2 SDRAM |
| 存储容量： | 1G（128M x 8） |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 60-TFBGA |
| 供应商设备封装： | 60-WBGA (8x12.5) |
| 包装： | 托盘 |
| 其它名称： | Q7152144 |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页
W971GG8JB
8.4.1.1
8.4.2
8.4.3
8.4.4
8.4.5
Examples of posted CAS operation ..................................................................... 23
Burst mode operation ....................................................................................................... 24
Burst read mode operation ............................................................................................... 25
Burst write mode operation .............................................................................................. 25
Write data mask ............................................................................................................... 26
8.5
8.6
Burst Interrupt ..................................................................................................................................... 26
Precharge operation............................................................................................................................ 27
8.6.1
8.6.2
Burst read operation followed by precharge ..................................................................... 27
Burst write operation followed by precharge .................................................................... 27
8.7
Auto-precharge operation ................................................................................................................... 27
8.7.1
8.7.2
Burst read with Auto-precharge ....................................................................................... 28
Burst write with Auto-precharge ....................................................................................... 28
8.8
8.9
Refresh Operation ............................................................................................................................... 29
Power Down Mode .............................................................................................................................. 29
8.9.1
8.9.2
Power Down Entry ........................................................................................................... 30
Power Down Exit .............................................................................................................. 30
9.
10.
8.10
9.1
9.2
9.3
9.4
9.5
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
10.10
10.11
Input clock frequency change during precharge power down ............................................................. 30
OPERATION MODE ........................................................................................................................... 31
Command Truth Table ........................................................................................................................ 31
Clock Enable (CKE) Truth Table for Synchronous Transitions ........................................................... 32
Data Mask (DM) Truth Table ............................................................................................................... 32
Function Truth Table ........................................................................................................................... 33
Simplified Stated Diagram ................................................................................................................... 36
ELECTRICAL CHARACTERISTICS ................................................................................................... 37
Absolute Maximum Ratings ................................................................................................................ 37
Operating Temperature Condition ....................................................................................................... 37
Recommended DC Operating Conditions ........................................................................................... 38
ODT DC Electrical Characteristics ...................................................................................................... 38
Input DC Logic Level ........................................................................................................................... 38
Input AC Logic Level ........................................................................................................................... 38
Capacitance ........................................................................................................................................ 39
Leakage and Output Buffer Characteristics ........................................................................................ 39
DC Characteristics .............................................................................................................................. 40
IDD Measurement Test Parameters .......................................................................................... 42
AC Characteristics ..................................................................................................................... 43
10.12
10.13
10.14
10.11.1
10.11.2
10.14.1
10.14.2
AC Characteristics and Operating Condition for -18 speed grade ................................... 43
AC Characteristics and Operating Condition for -25/25I/25A/25K/-3 speed grades ......... 45
AC Input Test Conditions ........................................................................................................... 66
Differential Input/Output AC Logic Levels .................................................................................. 66
AC Overshoot / Undershoot Specification ................................................................................. 67
AC Overshoot / Undershoot Specification for Address and Control Pins: ........................ 67
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins: .......... 67
11.
TIMING WAVEFORMS ....................................................................................................................... 68
Publication Release Date: Jun. 15, 2012
-2-
Revision A02
相关PDF资料 |
PDF描述 |
|---|---|
| W9725G6IB-25 | IC DDR2-800 SDRAM 256MB 84-WBGA |
| W9725G6JB25I | IC DDR2 SDRAM 256MBIT 84WBGA |
| W9725G6KB-25I | IC DDR2 SDRAM 256MBIT 84WBGA |
| W972GG6JB-3I | IC DDR2 SDRAM 2GBITS 84WBGA |
| W9751G6IB-25 | IC DDR2-800 SDRAM 512MB 84-WBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9725G6IB-25 | 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9725G6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9725G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:512MB DDRII |
| W9725G6JB25I | 功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| W9725G6KB-18 | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
发布紧急采购，3分钟左右您将得到回复。