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| 型号： | W971GG6JB25I |
| 厂商： | Winbond Electronics |
| 文件页数： | 3/87页 |
| 文件大小： | 0K |
| 描述： | IC DDR2 SDRAM 1GBIT 84WBGA |
| 标准包装： | 200 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR2 SDRAM |
| 存储容量： | 1G（64M x 16） |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | -40°C ~ 95°C |
| 封装/外壳： | 84-TFBGA |
| 供应商设备封装： | 84-WBGA（8x12.5） |
| 包装： | 托盘 |
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W971GG6JB
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11.1
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11.24
TIMING WAVEFORMS ....................................................................................................................... 68
Command Input Timing ....................................................................................................................... 68
ODT Timing for Active/Standby Mode ................................................................................................. 69
ODT Timing for Power Down Mode .................................................................................................... 69
ODT Timing mode switch at entering power down mode .................................................................... 70
ODT Timing mode switch at exiting power down mode ...................................................................... 71
Data output (read) timing .................................................................................................................... 72
Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................ 72
Data input (write) timing ...................................................................................................................... 73
Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4) .................................................................... 73
Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4) ...................................... 74
Seamless burst write operation: RL = 5 ( WL = 4, BL = 4)......................................................... 74
Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8) ............................................................. 75
Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) .................................................. 75
Write operation with Data Mask: WL=3, AL=0, BL=4) ............................................................... 76
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP ≤ 2clks) ............ 77
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP ≤ 2clks) ............ 77
Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP ≤ 2clks) ............ 78
Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP ≤ 2clks) ............ 78
Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP > 2clks) ............ 79
Burst write operation followed by precharge: WL = (RL-1) = 3 .................................................. 79
Burst write operation followed by precharge: WL = (RL-1) = 4 .................................................. 80
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL =8, tRTP ≤ 2clks) ............... 80
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP > 2clks) ............... 81
Burst read with Auto-precharge followed by an activation to the same bank (tRC Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks) ....................................................................................... 81
11.25
Burst read with Auto-precharge followed by an activation to the same bank (tRP Limit): RL=5
(AL=2, CL= 3, internal tRCD=3, BL=4, tRTP ≤ 2clks) ....................................................................................... 82
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Burst write with Auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3 ................................. 82
Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3 ....................... 83
Self Refresh Timing ................................................................................................................... 83
Basic Power Down Entry and Exit Timing.................................................................................. 84
Precharged Power Down Entry and Exit Timing ........................................................................ 84
Clock frequency change in precharge Power Down mode ........................................................ 85
PACKAGE SPECIFICATION .............................................................................................................. 86
REVISION HISTORY .......................................................................................................................... 87
Publication Release Date: Sep. 24, 2013
-3-
Revision A09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
| W971GG6JB25ITR | 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-800, X16, IND TEMP |
| W971GG6JB25TR | 制造商:Winbond Electronics Corp 功能描述:NR, DDR2-800, X16 |
| W971GG6JB-3 | 制造商:Winbond Electronics Corp 功能描述:1GBIT DDRII |
| W971GG6KB-18 | 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-1066, X16 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
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