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参数资料
| 型号： | VSMY2850RG |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IR EMITTER 850NM HIGH SPEED SMD |
| 产品培训模块： | A850 Series Infrared Surface Emitters |
| 特色产品： | High-Speed Infrared Emitting Diodes |
| 标准包装： | 1 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 50mW/sr @ 100mA |
| 波长： | 850nm |
| 正向电压： | 1.65V |
| 视角： | 20° |
| 方向： | 顶视图 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-SMD，鸥翼型 |
| 包装： | 标准包装 |
| 其它名称： | VSMY2850RGDKR |
VSMY2850RG, VSMY2850G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
TEST CONDITION
t p /T = 0.5, t p = 100 μs
t p = 100 μs
acc. figure 10, J-STD-020
J-STD-051, soldered on PCB
SYMBOL
V R
I F
I FM
I FSM
P V
T j
T amb
T stg
T sd
R thJA
VALUE
5
100
200
1
190
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
200
180
160
140
120
100
120
100
80
60
80
60
40
R thJA = 250 K/W
40
20
R thJA = 250 K/W
20
0
0
0
10
20
30
40
50
60
70 80
90 100
0
10
20 30 40
50 60 70 80
90 100
21890
T amb - Ambient Temperature (°C)
21891
T amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V F
TEST CONDITION
I F = 100 mA, t p = 20 ms
I F = 1 A, t p = 100 μs
I F = 100 mA
SYMBOL
V F
V F
TK VF
MIN.
TYP.
1.65
2.9
- 1.6
MAX.
1.9
UNIT
V
V
mV/K
Reverse current
I R
not designed for reverse operation
μA
Junction capacitance
V R = 0 V, f = 1 MHz, E = 0 mW/cm 2
C J
125
pF
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
I F = 100 mA, t p = 20 ms
I F = 1 A, t p = 100 μs
I F = 100 mA, t p = 20 ms
I F = 100 mA
I e
I e
φ e
TK φ e
50
100
850
55
- 0.2
150
mW/sr
mW/sr
mW
%/K
Angle of half intensity
?
± 10
deg
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ p
Rise time
Fall time
I F = 100 mA
I F = 30 mA
I F = 30 mA
I F = 100 mA, 20 % to 80 %
I F = 100 mA, 20 % to 80 %
λ p
Δλ
TK λ p
t r
t f
840
850
30
0.25
10
10
870
nm
nm
nm/K
ns
ns
Rev. 1.5, 06-Sep-13
2
Document Number: 83398
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VSMY2850RG_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology |
| VSMY2850RG1 | 制造商:Vishay Semiconductors 功能描述: |
| VSMY2850RGX01 | 制造商:Vishay Semiconductors 功能描述: |
| VSMY2853G | 功能描述:红外发射器 - 大功率 5volt 190mW 840nM 28Deg RoHS:否 制造商:OSRAM Opto Semiconductors 波长:940 nm 射束角:30 deg 功率额定值:180 mW 正向电流:100 mA 正向电压:1.5 V 封装: |
| VSMY2853RG | 功能描述:红外发射器 - 大功率 5volt 190mW 840nM 28Deg RoHS:否 制造商:OSRAM Opto Semiconductors 波长:940 nm 射束角:30 deg 功率额定值:180 mW 正向电流:100 mA 正向电压:1.5 V 封装: |
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