- 您现在的位置：买卖IC网 > PDF目录202515 > VN10LP (DIODES INC) PDF资料下载
参数资料
| 型号： | VN10LP |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件页数： | 1/1页 |
| 文件大小： | 0K |
| 代理商： | VN10LP |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – NOVEMBER 2005
FEATURES
*60 Volt V
DS
*R
DS(on)=5
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb = 25°C
ID
270
mA
Pulsed Drain Current
IDM
3A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb = 25°C
Ptot
625
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
ID=100A, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
2.5
V
ID=1mA, VDS= VGS
Gate Body Leakage
IGSS
100
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current (1)
IDSS
10
A
VDS=60 V, VGS=0V
On State Drain
Current(1)
ID(on)
750
mA
VDS=15 V, VGS=10V
Static Drain Source On
State Resistance (1)
RDS(on)
5.0
7.5
VGS=10V,ID=500mA
VGS=5V, ID=200mA
Forward
Transconductance
(1)(2)
gfs
100
mS
VDS=15V,ID=500mA
Input Capacitance (2)
Ciss
60
pF
Common Source
Output Capacitance (2)
Coss
25
pF
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance (2)
Crss
5pF
Turn-On Time (2)(3)
t(on)
10
ns
VDD ≈15V, ID=600mA
Turn-Off Time (2)(3)
t(off)
10
ns
E-Line
TO92 Compatible
VN10LP
3-90
D
G
S
相关PDF资料 |
PDF描述 |
|---|---|
| VNC1L-1A | |
| VND5E012AYTR-E | SPECIALTY ANALOG CIRCUIT, PDSO36 |
| VNL5050S5-E | POWER SUPPLY SUPPORT CKT, PDSO8 |
| VNL5050N3TR-E | POWER SUPPLY SUPPORT CKT, PDSO3 |
| VO27.0000000M0000001 | VCXO, CLOCK, 27 MHz, TTL OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VN10LP_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| VN10LPSTOA | 功能描述:MOSFET VMOS N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| VN10LPSTOB | 功能描述:MOSFET VMOS N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| VN10LPSTZ | 功能描述:MOSFET VMOS N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| VN1102A00 | 制造商:SHIELD 制造商全称:SHIELD s.r.l. 功能描述:For electrovalves, style C-ind, 2p or 3p+G, female, field attachable |
发布紧急采购，3分钟左右您将得到回复。