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参数资料
| 型号： | SUD19N20-90-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 200V DPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 标准包装 |
| 其它名称： | SUD19N20-90-E3DKR |
SUD19N20-90
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
200
2
4
± 100
V
nA
V DS = 200 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 200 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 200 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = ? 5 V, V GS = 10 V
V GS = 10 V, I D = 5 A
40
0.075
0.090
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 5 A, T J = 125 °C
V GS = 10 V, I D = 5 A, T J = 175 °C
V GS = 6 V, I D = 5 A
0.082
0.190
0.260
0.105
?
Forward
Transconductance b
g fs
V DS = 15 V, I D = 19 A
35
S
Dynamic a
Input Capacitance
C iss
1800
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 25 V, F = 1 MHz
V DS = 100 V, V GS = 10 V, I D = 19 A
180
80
34
8
12
51
pF
nC
Gate Resistance
R g
0.5
2.9
?
Turn-On Delay
Time c
t d(on)
15
25
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 100 V, R L = 5.2 ?
I D ? 19 A, V GEN = 10 V, R g = 2.5 ?
50
30
60
75
45
90
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
Pulsed Current
I SM
50
A
Diode Forward Voltage
b
V SD
I F = 19 A, V GS = 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 19 A, dI/dt = 100 A/μs
180
250
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD19N20-90-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD19N20-90T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 200V 19A 3PIN TO-252 - Tape and Reel |
| SUD19N20-90-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R |
| SUD19N20-90-T4-E3 | 功能描述:MOSFET N-CH 200V 19A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD19P06-60 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
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