参数资料
型号: SI8606AD-B-IS
厂商: Silicon Laboratories Inc
文件页数: 6/40页
文件大小: 0K
描述: IC ISOLATOR BIDIR 5.0KV 16-SOIC
标准包装: 46
输入 - 1 侧/2 侧: 4/2
通道数: 2
电源电压: 3 V ~ 5.5 V
电压 - 隔离: 5000Vrms
数据速率: 10Mbps
传输延迟: 20ns
输出类型: 开路漏极
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 管件
工作温度: -40°C ~ 125°C
其它名称: 336-2055-5
Si860x
Table 3. Si8600/02/05/06 Electrical Characteristics for Bidirectional I 2 C Channels 1 (Continued)
3.0 V < VDD < 5.5 V. TA = –40 to +125 °C. Typical specs at 25 °C unless otherwise noted.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Timing Specifications (Measured at 1.40 V Unless Otherwise Specified)
Maximum I 2 C Bus Frequency
Fmax
1.7
MHz
Propagation Delay
5 V Operation
Side A to Side B Rising 4
Side A to Side B Falling 4
Side B to Side A Rising
Side B to Side A Falling
Tphab
Tplab
Tphba
Tplba
No bus capacitance,
R1 = 1400,
R2 = 499,
See Figure 2
38
15
33
11
45
26
46
22
ns
ns
ns
ns
3.3 V Operation
Side A to Side B Rising 4
Tphab
44
55
ns
Side A to Side B Falling 4
Side B to Side A Rising
Side B to Side A Falling
Tplab
Tphba
Tplba
R1 = 806
R2 = 499
17
30
14
29
40
27
ns
ns
ns
Pulse Width Distortion
5V
No bus capacitance,
R1 = 1400,
Side A Low to Side B Low 4
Side B Low to Side A Low
PWDAB
PWDBA
R2 = 499,
See Figure 2
22
21
32
32
ns
ns
3.3 V
Side A Low to Side B Low 4
Side B Low to Side A Low
PWDAB
PWDBA
R1 = 806,
R2 = 499
27
15
35
25
ns
ns
Notes:
1. All voltages are relative to respective ground.
2. V IL < 0.410 V, V IH > 0.540 V.
3. I 2 C ? V (Side A) = I 2 CV OL (Side A) – I 2 CV T (Side A). To ensure no latch-up on a given bus, I 2 C ? V (Side A) is the
minimum difference between the output logic low level of the driving device and the input logic threshold.
4. Side A measured at 0.6 V.
6
Rev. 1.3
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