参数资料
型号: SI8606AD-B-IS
厂商: Silicon Laboratories Inc
文件页数: 11/40页
文件大小: 0K
描述: IC ISOLATOR BIDIR 5.0KV 16-SOIC
标准包装: 46
输入 - 1 侧/2 侧: 4/2
通道数: 2
电源电压: 3 V ~ 5.5 V
电压 - 隔离: 5000Vrms
数据速率: 10Mbps
传输延迟: 20ns
输出类型: 开路漏极
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 管件
工作温度: -40°C ~ 125°C
其它名称: 336-2055-5
Si860x
Table 7. Insulation and Safety-Related Specifications
Value
Parameter
Symbol
Test Condition
NB
NB
WB
Unit
SOIC-8
SOIC-16
SOIC-16
Nominal Air Gap (Clearance) 1
Nominal External Tracking
(Creepage) 1
Minimum Internal Gap
(Internal Clearance)
L(1O1)
L(1O2)
4.9
4.01
0.014
4.9
4.01
0.014
8.0
8.0
0.014
mm
mm
mm
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
Resistance (Input-Output) 2
Capacitance (Input-Output) 2
Input Capacitance 3
PTI
ED
R IO
C IO
C I
IEC60112
f = 1 MHz
Non-I 2 C Channel
I 2 C Channel
600
0.040
10 12
1.0
4.0
10
600
0.019
10 12
2.0
4.0
10
600
0.019
10 12
2.0
4.0
10
V RMS
mm
?
pF
pF
pF
Notes:
1. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-8 and SOIC-16 packages and
8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for
component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8
and SOIC-16 packages and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si860x, SO-16, is converted into a 2-terminal device. Pins 1–8 (1–4, SO-
8) are shorted together to form the first terminal and pins 9–16 (5–8, SO-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Specification
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V RMS
Rated Mains Voltages < 300 V RMS
Rated Mains Voltages < 400 V RMS
Rated Mains Voltages < 600 V RMS
Rev. 1.3
NB SOIC-8
SOIC-16
I
I-IV
I-III
I-II
I-II
WB SOIC-16
I
I-IV
I-IV
I-III
I-III
11
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