- 您现在的位置：买卖IC网 > PDF目录192295 > S25FL004D0LNFI013 (SPANSION LLC) 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface PDF资料下载
参数资料
| 型号： | S25FL004D0LNFI013 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| 中文描述： | 4M X 1 FLASH 3V PROM, DSO8 |
| 封装： | 6 X 5 MM, LEAD FREE, MO-229, WSON-8 |
| 文件页数： | 19/36页 |
| 文件大小： | 724K |
| 代理商： | S25FL004D0LNFI013 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页当前第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页
26
S25FL Family (Serial Peripheral Interface) S25FL004D
S25FL004D_00A0 June 28, 2004
Ad va n c e
In f o rm a t i o n
Power-up and Power-down
The device must not be selected at power-up or power-down (that is, CS# must
follow the voltage applied on VCC) until VCC reaches the correct value as follows:
VCC (min) at power-up, and then for a further delay of tPU (as described in
VSS at power-down
A simple pull-up resistor on Chip Select (CS#) can usually be used to insure safe
and proper power-up and power-down.
old. However, correct operation of the device is not guaranteed if by this time VCC
is still below VCC (min). No Write Status Register, Program or Erase instructions
At power-up, the device is in Standby mode (not Deep Power Down mode) and
the WEL bit is reset.
During Power-down or voltage drops, the power down must drop below the VCC
(low) for a period of minimum tPD for the device to initialize correctly on power
up. (See Figure 18).
Normal precautions must be taken for supply rail decoupling to stabilize the VCC
feed. Each device in a system should have the VCC rail decoupled by a suitable
capacitor close to the package pins (this capacitor is generally of the order of 0.1
F).
At power-down, when VCC drops from the operating voltage to below the mini-
mum VCC threshold, all operations are disabled and the device does not respond
to any instructions. (The designer needs to be aware that if a power-down occurs
while a Write, Program or Erase cycle is in progress, data corruption can result.)
相关PDF资料 |
PDF描述 |
|---|---|
| S25FL004D | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNAI011 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNAI013 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL064A0LNAI00 | 64M X 1 FLASH 3V PROM, PDSO16 |
| S2684-254 | PHOTO DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S25FL004K0XMFI010 | 功能描述:闪存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S25FL004K0XMFI011 | 功能描述:闪存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S25FL004K0XMFI013 | 制造商:Spansion 功能描述:FLASH SERL-SPI 3V/3.3V 4MBIT - Bulk |
| S25FL004K0XMFI040 | 功能描述:闪存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S25FL004K0XMFI041 | 制造商:Spansion 功能描述:IC 4-MBIT CMOS 3.0 VOLT FLASH MEMORY 104MHZ SPI - Bulk |
发布紧急采购，3分钟左右您将得到回复。