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参数资料
| 型号： | NTMS5P02R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.95A 8-SOIC |
| 产品变化通告： | Wire Change 20/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.95A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 5.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 16V |
| 功率 - 最大： | 790mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMS5P02R2GOSDKR |
NTMS5P02, NVMS5P02
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 m W )
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ?
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance ?
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance ?
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche Energy ? Starting T J = 25 ° C
(V DD = ? 20 Vdc, V GS = ? 5.0 Vdc, Peak I L = ? 8.5 Apk, L = 10 mH, R G = 25 W )
Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds
Symbol
V DSS
V DGR
V GS
R q JA
P D
I D
I D
P D
I D
I DM
R q JA
P D
I D
I D
P D
I D
I DM
R q JA
P D
I D
I D
P D
I D
I DM
T J , T stg
E AS
T L
Value
? 20
? 20
± 10
50
2.5
? 7.05
? 5.62
1.2
? 4.85
? 28
85
1.47
? 5.40
? 4.30
0.7
? 3.72
? 20
159
0.79
? 3.95
? 3.15
0.38
? 2.75
? 12
? 55 to +150
360
260
Unit
V
V
V
° C/W
W
A
A
W
A
A
° C/W
W
A
A
W
A
A
° C/W
W
A
A
W
A
A
° C
mJ
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto a 2 ″ square FR ? 4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
2. Mounted onto a 2 ″ square FR ? 4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided), t = steady state.
3. Minimum FR ? 4 or G ? 10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
http://onsemi.com
2
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