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参数资料
| 型号： | NTD24N06T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 24A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 25V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NTD24N06T4GOSDKR |
NTD24N06
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
60
?
71.1
70.4
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
2.0
?
3.03
7.0
4.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 3)
R DS(on)
m W
(V GS = 10 Vdc, I D = 10 Adc)
(V GS = 10 Vdc, I D = 12 Adc)
Static Drain?to?Source On?Resistance (Note 3)
(V GS = 10 Vdc, I D = 20 Adc)
(V GS = 10 Vdc, I D = 24 Adc)
(V GS = 10 Vdc, I D = 12 Adc, T J = 150 ° C)
V DS(on)
?
?
?
?
?
32
32
0.8
0.8
0.7
42
?
1.15
?
?
Vdc
Forward Transconductance (Note 3) (V DS = 7.0 Vdc, I D = 12 Adc)
g FS
?
15
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
846
1200
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
252
68
350
95
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
10
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 24 Adc,
V GS = 10 Vdc,
R G = 9.1 W ) (Note 3)
t r
t d(off)
t f
?
?
?
24
25
27
50
50
60
Gate Charge
(V DS = 48 Vdc, I D = 24 Adc,
V GS = 10 Vdc) (Note 3)
Q T
Q 1
Q 2
?
?
?
24
5.0
11.5
48
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(I S = 20 Adc, V GS = 0 Vdc) (Note 3)
V SD
?
0.95
1.15
Vdc
(I S = 24 Adc, V GS = 0 Vdc)
(I S = 24 Adc, V GS = 0 Vdc, T J = 150 ° C)
?
?
1.0
0.89
?
?
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 24 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
t rr
t a
t b
Q RR
?
?
?
?
49
35
13
0.096
?
?
?
?
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTD24N06
NTD24N06G
NTD2406?1
NTD2406?1G
NTD24N06T4
NTD24N06T4G
Package
DPAK
DPAK
(Pb?Free)
DPAK (Straight Lead)
DPAK (Straight Lead)
(Pb?Free)
DPAK
DPAK
Shipping ?
75 Units / Rail
75 Units / Rail
75 Units / Rail
75 Units / Rail
2500 Tape & Reel
2500 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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