参数资料
型号: NE5517NG
厂商: ON Semiconductor
文件页数: 11/15页
文件大小: 0K
描述: IC AMP XCONDUCTANCE DUAL 16-DIP
标准包装: 25
放大器类型: 跨导
电路数: 2
输出类型: 推挽式
转换速率: 50 V/µs
增益带宽积: 2MHz
电流 - 输入偏压: 400nA
电压 - 输入偏移: 400µV
电流 - 电源: 2.6mA
电流 - 输出 / 通道: 650µA
电压 - 电源,单路/双路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作温度: 0°C ~ 70°C
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-DIP
包装: 管件
NE5517, NE5517A, AU5517
http://onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT
VCMR
VOUT
μ
10
1
PEAK
OUTPUT
CURRENT
(
A)
0.1mA1mA10mA
100mA 1000mA
AMPLIFIER BIAS CURRENT (IABC)
+125°C
4
3
2
+25°C
-55°C
10
4
3
2
5
-50°C -25°C0°C25°C50°C75°C100°C125°C
0V
(+)VIN = ()VIN = VOUT = 36V
LEAKAGE
CURRENT
(pA)
AMBIENT TEMPERATURE (TA)
μ
10
TRANSCONDUCT
ANCE
(gM)
(
ohm)
4
3
2
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
+125°C
+25°C
-55°C
5
gM
mq
m
M
PINS 2, 15
OPEN
10
1
0.1
0.01
INPUT
RESIST
ANCE
(MEG
)
1
2
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
PINS 2, 15
OPEN
10
1
INPUT
LEAKAGE
CURRENT
(pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125°C
+25°C
0
1
23
45
6
7
5
INPUT
OFFSET
VOL
TAGE
(mV)
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 3. Input Offset Voltage
VS = ±15V
+125°C
+25°C
-55°C
+125°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK
OUTPUT
VOL
TAGE
AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
Tamb = 25°C
VCMR
RLOAD =
COMMON-MODE
RANGE
(V)
10
1
0.1
INPUT
OFFSET
CURRENT
(nA)
2
3
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 4. Input Bias Current
VS = ±15V
+125°C
+25°C
-55°C
10
1
INPUT
BIAS
CURRENT
(nA)
3
4
0.1mA1mA10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 5. Input Bias Current
VS = ±15V
+125°C
+25°C
-55°C
2
Figure 6. Peak Output Current
Figure 7. Peak Output Voltage and
Common-Mode Range
Figure 8. Leakage Current
Figure 9. Input Leakage
Figure 10. Transconductance
Figure 11. Input Resistance
Ω
VS = ±15V
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