参数资料
型号: MWI50-12A7T
厂商: IXYS
文件页数: 4/4页
文件大小: 0K
描述: MOD IGBT SIXPACK RBSOA 1200V E2
标准包装: 6
IGBT 类型: NPT
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,50A
电流 - 集电极 (Ic)(最大): 85A
电流 - 集电极截止(最大): 4mA
Vce 时的输入电容 (Cies): 3.3nF @ 25V
功率 - 最大: 350W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: E2
供应商设备封装: E2
MWI 50-12 A7
MWI 50-12 A7T
24
120
12
600
E on
mJ
18
12
6
t d(on)
t r
E on
V CE = 600V
V GE = ±15V
R G = 22 Ω
T J = 125°C
ns
90
60
30
t
E off
mJ
10
8
6
4
2
E off ns
500
t d(off)
400 t
300
V CE = 600V
V GE = ±15V
200
R G = 22 Ω
T J = 125°C
100
t f
0
0
0
0
0
20
40
60
80
100 A
0
20
40
60
80
100 A
I C
Fig. 7 Typ. turn on energy and switching
times versus collector current
I C
Fig. 8 Typ. turn off energy and switching
times versus collector current
20
mJ
E on 15
V CE = 600V
V GE = ±15V
I C = 50A
T J = 125°C
t d(on)
E on
240
ns
180
t
E off
10
mJ
8
V CE = 600V
V GE = ±15V
I C = 50A
T J = 125°C
t d(off)
E off
1500
ns
1200
t
6
900
10
120
t r
4
600
5
60
2
300
0
0 10 20 30 40 50 60 70 80 90 100 Ω
0
0
t f
0 10 20 30 40 50 60 70 80 90 100 Ω
0
120
A
100
R G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
1
K/W
0.1
R G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
I CM
80
R G = 22 Ω
Z thJC
0.01
diode
IGBT
60
T J = 125°C
40
V CEK < V CES
0.001
20
0
0.0001
0.00001
single pulse
MWI50-12A7
0
200
400
600
800 1000 1200 V
0.00001 0.0001
0.001
0.01
0.1
s
1
V CE
Fig. 11 Reverse biased safe operating area
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
t
Fig. 12 Typ. transient thermal impedance
20070912a
4-4
相关PDF资料
PDF描述
MWI50-12T7T MOD IGBT SIX-PACK RBSOA E2
MWI60-06G6K MOD IGBT SIX-PACK RBSOA E1
MWI60-12T6K MOD IGBT SIXPACK RBSOA 1200V E1
MWI75-06A7T MOD IGBT SIXPACK RBSOA 600V E2
MWI75-12A8 MOD IGBT SIXPACK RBSOA 1200V E3
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