参数资料
型号: MUBW35-12A8
厂商: IXYS
文件页数: 1/8页
文件大小: 0K
描述: MODULE IGBT CBI E3
标准包装: 5
IGBT 类型: NPT
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 3.1V @ 15V,35A
电流 - 集电极 (Ic)(最大): 50A
电流 - 集电极截止(最大): 1.1mA
Vce 时的输入电容 (Cies): 1.65nF @ 25V
功率 - 最大: 225W
输入: 三相桥式整流器
NTC 热敏电阻: 是
安装类型: 底座安装
封装/外壳: E3
供应商设备封装: E3
MUBW 35-12 A8
Converter - Brake - Inverter Module (CBI3)
21
22
D11
1
D13
2
D15
3
7
D7
T1
16
15
D1
6
T3
18
17
D3
5
T5
20
19
D5
4
D12
D14
D16
T7
T2
D2
T4
D4
T6
D6
E72873
14
11
12
13
See outline drawing for pin arrangement
23
24
10
NTC
8
9
Three Phase
Rectifier
V RRM = 1600 V
Brake Chopper
V CES = 1200 V
Three Phase
Inverter
V CES = 1200 V
I FAVM = 42 A
I C25
= 35 A
I C25
= 50 A
I FSM
= 300 A
V CE(sat) = 2.3 V
V CE(sat) = 2.5 V
Input Rectifier D11 - D16
Application: AC motor drives with
Symbol
Conditions
Maximum Ratings
●
●
Input from single or three phase grid
Three phase synchronous or
V RRM
1600
V
●
asynchronous motor
electric braking operation
I FAV
I DAVM
T C = 80°C; sine 180°
T C = 80°C; rectangular; d = 1/3; bridge
30
80
A
A
Features
I FSM
P tot
T VJ = 25°C; t = 10 ms; sine 50 Hz
T C = 25°C
300
100
A
W
●
High level of integration - only one power
semiconductor module required for the
whole drive
●
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
●
●
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
V F
I F = 35 A; T VJ = 25°C
T VJ = 125°C
1.2
1.2
1.4
V
V
●
copper base plate and soldering pins for
PCB mounting
Temperature sense included
I R
V R = V RRM ; T VJ = 25°C
T VJ = 125°C
0.4
0.02
mA
mA
R thJC
(per diode)
1.3 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-8
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