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| 型号： | MTB50P03HDLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 50A D2PAK |
| 产品目录绘图： | MOSFET D2PAK |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 25A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4900pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTB50P03HDLT4GOSDKR |
MTB50P03HDL,
MVB50P03HDLT4G
P-Channel Power MOSFET
50 A, 30 V, Logic Level D 2 PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain ? to ? source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
? Avalanche Energy Specified
? Source ? to ? Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? Short Heatsink Tab Manufactured ? Not Sheared
? Specially Designed Leadframe for Maximum Power Dissipation
? MVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
http://onsemi.com
50 AMPERES
30 VOLTS
R DS(on) = 25 m W
P ? Channel
D
G
S
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
1
2
4
D 2 PAK
CASE 418B
STYLE 2
Rating
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1.0 M W )
Gate ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 10 ms)
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T C = 25 ° C, when
mounted with min. recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc, Peak
I L = 50 Apk, L = 1.0 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
? Junction ? to ? Ambient, when mounted with
the minimum recommended pad size
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
Symbol
V DSS
V DGR
V GS
V GSM
I D
I D
I DM
P D
T J , T stg
E AS
R q JC
R q JA
R q JA
T L
Value
30
30
± 15
± 20
50
31
150
125
1.0
2.5
? 55 to 150
1250
1.0
62.5
50
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/ ° C
W
° C
mJ
° C/W
° C
3
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M TB
50P03HG
AYWW
2
Drain
1 3
Gate Source
MTB50P03H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2014
January, 2014 ? Rev. 7
1
Publication Order Number:
MTB50P03HDL/D
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