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参数资料
| 型号： | MRF5S9101NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件页数： | 19/20页 |
| 文件大小： | 544K |
| 代理商： | MRF5S9101NBR1 |
8
RF Device Data
Freescale Semiconductor
MRF5S9101NR1 MRF5S9101NBR1
TYPICAL CHARACTERISTICS - 900 MHz
90
85
65
0
TC = 85_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth @ 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
25
_C
30
_C
70
75
80
10
20
30
40
50
60
70
80
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
210
1.E+07
1.E+10
90
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
1.E+09
1.E+08
100 110 120 130 140 150 160 170 180 190 200
GSM TEST SIGNAL
Figure 14. EDGE Spectrum
10
20
30
40
50
60
70
80
90
100
200 kHz
Span 2 MHz
Center 1.96 GHz
110
400 kHz
600 kHz
400 kHz
600 kHz
(dB)
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9101NR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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