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参数资料
| 型号： | MRF5S9100MR1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | PLASTIC, CASE 1486-03, 4 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 426K |
| 代理商： | MRF5S9100MR1 |
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
100
70
0
0.1
7th Order
TWO TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 26 Vdc, Pout = 96 W (PEP), IDQ = 950 mA
Two Tone Measurements, Center Frequency = 880 MHz
5th Order
3rd Order
110
10
20
30
40
50
60
38
48
58
28
Pin, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
57
56
55
54
53
52
51
50
49
29
30
31
32
33
34
35
36
37
,DRAIN
EFFICIENCY
(%)
η
D
η
D
100
0
50
1
80
30
Gps
ACPR
ALT1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. IS-95 ACPR, Power Gain, Efficiency
and ALT1 versus Output Power
VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz
N CDMA IS95 (Pilot, Sync, Paging,
Traffic Codes 8 through 13)
G
ps
,POWER
GAIN
(dB)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
AL
T1,
CHANNEL
POWER
(dBm)
45
35
40
35
45
30
50
25
55
20
60
15
65
10
70
575
10
Ideal
P3dB = 51.58 dBm (143 W)
VDD = 26 Vdc, IDQ = 950 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 880 MHz
Actual
P1dB = 50.71 dBm (117 W)
180
17
20
0
VDD = 12 V
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
IDQ = 950 mA
f = 880 MHz
16 V
20 V
24 V
32 V
19.5
19
18.5
18
17.5
30
60
90
120
150
220
1010
80
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
100
120
140
160
180
109
107
108
Figure 11. MTTF Factor versus Junction Temperature
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
200
P
out
,OUTPUT
POWER
(dBm)
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF5S9101NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF5S9101NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S9101MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9100N | 制造商:FREESCALE-SEMI 功能描述: |
| MRF5S9100NBR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9100NR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9101MBR1 | 功能描述:MOSFET RF N-CH 26V 100W TO2724 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9101MR1 | 功能描述:MOSFET RF N-CH 26V 100W TO2704 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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