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参数资料
| 型号： | MRF5S9100MR1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | PLASTIC, CASE 1486-03, 4 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 426K |
| 代理商： | MRF5S9100MR1 |
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
TO-270 WB-4
PLASTIC
MRF5S9100NR1(MR1)
CASE 1486-03
ISSUE B
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
H
DRAIN LEAD
D
A
M
aaa
C
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS
“D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
“D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION
“b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE
“b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE
“J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.712
.720
18.08
18.29
D1
.688
.692
17.48
17.58
D2
.011
.019
0.28
0.48
D3
.600
15.24
E
.551
.559
14
14.2
E1
.353
.357
8.97
9.07
E2
.132
.140
3.35
3.56
E3
.124
.132
3.15
3.35
E4
.270
6.86
F
b1
.164
.170
4.17
4.32
c1
.007
.011
0.18
0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004
0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
.346
.350
8.79
8.89
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF5S9101NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF5S9101NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S9101MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9100N | 制造商:FREESCALE-SEMI 功能描述: |
| MRF5S9100NBR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9100NR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9101MBR1 | 功能描述:MOSFET RF N-CH 26V 100W TO2724 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9101MR1 | 功能描述:MOSFET RF N-CH 26V 100W TO2704 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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