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参数资料
| 型号： | MRF5S9070MR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1265-08, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 569K |
| 代理商： | MRF5S9070MR1 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF5S9070MR1
TYPICAL CHARACTERISTICS
900
8
20
860
70
45
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Performance
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA
SingleCarrier NCDMA, IS95
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
30
15
18
21
24
INPUT
RETURN
LOSS
(dB)
IRL,
ACPR
(dBc),
AL
T
(dBc)
27
865
870
875
880
885
890
895
19
40
18
35
17
30
16
25
15
14
40
13
45
12
50
11
55
10
60
9
65
12
100
15
20
1
IDQ = 900 mA
300 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
100 kHz Tone Spacing
450 mA
600 mA
750 mA
10
19
18
17
16
100
60
20
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
IDQ = 900 mA
300 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
100 kHz Tone Spacing
450 mA
600 mA
750 mA
25
30
35
40
45
50
55
10
100
8
20
1
60
Gps
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Drain Efficiency and
IMD versus Output Power
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 26 Vdc, IDQ = 600 mA
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements,
100 kHz Tone Spacing
10
18
40
16
20
14
0
12
20
10
40
100
90
10
1
7th Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 26 Vdc, IDQ = 600 mA
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
Center Frequency = 880 MHz
100 kHz Tone Spacing
5th Order
3rd Order
10
20
30
40
50
60
70
80
ALT
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9070NR1 | 功能描述:射频MOSFET电源晶体管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9070NR5 | 功能描述:射频MOSFET电源晶体管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9080NBR1 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9080NR1 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9100MBR1 | 功能描述:MOSFET RF N-CH 26V 20W TO-272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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