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参数资料
| 型号： | MRF5S21130R3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 381K |
| 代理商： | MRF5S21130R3 |
Fr
eescale
Semiconductor
,Inc.
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
Freescale Semiconductor, Inc.
MRF5S21130R3 MRF5S21130SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
20
515
10
0
5
10
15
20
25
η
0
35
5
55
20
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG. (WCDMA)
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3
(dBc),
ACPR
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
10
15
20
25
30
35
40
45
30
25
30
20
35
15
40
10
45
5
50
IM3
Figure 9. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(dB)
90
100
40
30
3.84 MHz
Channel BW
IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
2
468
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x WCDMA, 10 MHz @
3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTBF Factor versus Junction Temperature
MTBF
FACT
OR
(HOURS
x
AMPS
)
2
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
108
107
106
120
140
160
180
200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21130S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21150 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S21150HR3 | 功能描述:MOSFET RF N-CHAN 28V 33W NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21150HR5 | 功能描述:MOSFET RF N-CHAN 28V 33W NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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