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参数资料
| 型号： | MRF5S21130R3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 381K |
| 代理商： | MRF5S21130R3 |
Fr
eescale
Semiconductor
,Inc.
AR
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HIVE
INF
O
RMA
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ARCHIVE
INFORMA
TION
Freescale Semiconductor, Inc.
MRF5S21130R3 MRF5S21130SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
IM3
(dBc),
ACPR
(dBc)
G
ps
,POWER
GAIN
(dB)
,DRAINη
30
10
15
20
25
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
2200
2180
2160
2140
2120
2100
2080
6
14
13
12
11
10
9
8
7
44
35
30
25
20
28
32
36
40
EFFICIENCY
(%)
1000
11
15
1
IDQ = 1600 mA
1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
800 mA
1200 mA
1000 mA
10
100
14.5
14
13.5
13
12.5
12
11.5
1000
65
25
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
100
10
30
35
40
45
50
55
60
1000 mA
800 mA
IDQ = 1600 mA
1200 mA
1400 mA
VDD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
TwoTone Measurement,
10 MHz Tone Spacing
100
60
25
0.1
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
110
30
35
40
45
50
55
50
58
35
Ideal
P1dB = 52.5 dBm (178 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 5
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
P3dB = 53.02 dBm (200.5 W)
57
56
55
54
53
52
51
37
39
41
43
45
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
TwoTone Measurements, Center Frequency = 2140 MHz
3rd Order
5th Order
7th Order
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21130S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21150 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S21150HR3 | 功能描述:MOSFET RF N-CHAN 28V 33W NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21150HR5 | 功能描述:MOSFET RF N-CHAN 28V 33W NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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