参数资料
型号: MRF5S21130HR3
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-880, CASE 465B-03, 2 PIN
文件页数: 10/12页
文件大小: 375K
代理商: MRF5S21130HR3
MRF5S21130HR3 MRF5S21130HSR3
MOTOROLA RF DEVICE DATA
Figure 12. Series Equivalent Input and Output Impedance
f
MHz
Zsource
Zload
2080
2110
2140
1.51 - j2.97
1.59 - j2.68
1.52 - j2.54
2.87 - j9.49
3.13 - j9.86
4.05 - j10.90
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg.
Zo = 25
Zload*
f = 2080 MHz
f = 2200 MHz
Zsource
f = 2080 MHz
f = 2200 MHz
2170
2200
1.54 - j3.13
1.62 - j2.70
4.80 - j11.75
5.55 - j11.87
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料
PDF描述
MRF5S21130HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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相关代理商/技术参数
参数描述
MRF5S21130HR5 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21130HS 制造商:Motorola Inc 功能描述:
MRF5S21130HSR3 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21130HSR5 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21130R3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs