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参数资料
型号： MRF5S21100LR3
厂商： FREESCALE SEMICONDUCTOR INC
元件分类： 功率晶体管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： NI-780, CASE 465-06, 2 PIN
文件页数： 6/12页
文件大小： 390K
代理商： MRF5S21100LR3
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Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S21100LR3 MRF5S21100LSR3
MOTOROLA RF DEVICE DATA
3
For More Information On This Product,
Go to: www.freescale.com
Figure 1. MRF5S21100L Test Circuit Schematic
C12
R2
VGG
VDD
C11
C8
C7
C5
C14
C3
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
Z8
Z16
Z10 Z11 Z12
Z15
Z17
+
Z10
0.368″ x 1.136″ Microstrip
Z11
0.151″ x 0.393″ Microstrip
Z12
0.280″ x 0.220″ Microstrip
Z13
0.481″ x 0.142″ Microstrip
Z14
0.138″ x 0.080″ Microstrip
Z15
0.344″ x 0.080″ Microstrip
Z16
0.147″ x 0.099″ Microstrip
Z17
0.859″ x 0.080″ Microstrip
PCB
Arlon GX-0300-SS -22, 30 mil, εr = 2.55
Z1
0.674″ x 0.080″ Microstrip
Z2
0.421″ x 0.080″ Microstrip
Z3
0.140″ x 0.080″ Microstrip
Z4
1.031″ x 0.080″ Microstrip
Z5
0.380″ x 0.643″ Microstrip
Z6
0.080″ x 0.643″ Microstrip
Z7
0.927″ x 0.048″ Microstrip
Z8
0.620″ x 0.048″ Microstrip
Z9
0.079″ x 1.136″ Microstrip
DUT
B1
R3
C9
C4
C13
C15
Z13 Z14
C2
C6
W1
R4
Table 1. MRF5S21100L Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1
Short RF Bead
95F786
Newark
C1, C2
8.2 pF Chip Capacitors, B Case
100B8R2CP500X
ATC
C3
5.6 pF Chip Capacitor, B Case
100B5R6CP500X
ATC
C4
0.1 F Chip Capacitor, B Case
CDR33BX104AKWS
Kemet
C5, C7
7.5 pF Chip Capacitors, B Case
100B7R5JP500X
ATC
C6
1.2 pF Chip Capacitor, B Case
100B1R2BP500X
ATC
C8
1K pF Chip Capacitor, B Case
100B102JP500X
ATC
C9, C10
0.56 F Chip Capacitors, B Case
700A561MP150X
Kemet
C11
470 F, 63 V Electrolytic Capacitor
95F4579
Newark
C12
100 F, 50 V Electrolytic Capacitor
51F2913
Newark
C13
0.6-4.5 pF Gigatrim Variable Capacitor
44F3358
Newark
C14
2.7 pF Chip Capacitor, B Case
100B2R7CP500X
ATC
C15
0.4-2.5 pF Gigatrim Variable Capacitor
44F3367
Newark
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
Wire Strap
14 Gauge Jumper Wire
相关PDF资料
PDF描述
MRF5S21100L S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21130HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21130HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21130HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21130SR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF5S21100LSR3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130HR3 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21130HR5 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21130HS 制造商:Motorola Inc 功能描述:
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