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参数资料
| 型号： | MRF5S19100LSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 541K |
| 代理商： | MRF5S19100LSR3 |
AR
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HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S19100LR3 MRF5S19100LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
0
35
1
70
21
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
IM3
(dBc),
ACPR
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x NCDMA, 2.5 MHz @ 1.2288 MHz
Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
IM3
28
30
35
25
42
20
49
15
56
10
5
63
10
100
0
f, FREQUENCY (MHz)
Figure 9. 2-Carrier N-CDMA Spectrum
(dB)
10
20
30
40
50
60
70
80
90
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTBF Factor versus Junction Temperature
MTBF
FACT
OR
(HOURS
x
AMPS
)
2
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
108
107
106
120
140
160
180
200
ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
1.5
3
4.5
6
7.5
75
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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