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参数资料
| 型号： | MRF5S19100LSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 541K |
| 代理商： | MRF5S19100LSR3 |
AR
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HIVE
INF
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RMA
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ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S19100LR3 MRF5S19100LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
5
15
1860
55
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAINη
IM3
(dBc),
ACPR
(dBc)
35
15
20
25
30
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
13
30
11
20
9
35
7
45
1880 1900 1920 1940 1960 1980 2000 2020 2040
10
EFFICIENCY
(%)
100
10
16
1
1300 mA
IDQ = 1500 mA
1000 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
760 mA
530 mA
10
15
14
13
11
100
55
15
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
1000 mA
1300 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
760 mA
IDQ = 1500 mA
10
20
25
30
35
40
45
50
10
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
30
35
40
45
50
1
5th Order
3rd Order
44
46
58
32
P3dB = 51.98 dBm (157.81 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
42
P1dB = 51.3 dBm (135.01 W)
Ideal
Actual
57
56
55
54
53
52
51
49
47
33
34
35
36
37
38
39
40
41
50
48
43
40
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
TwoTone Measurements, Center Frequency = 1960 MHz
530 mA
12
35
25
50
40
30
14
12
10
8
6
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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