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参数资料
| 型号： | MRF5P21240HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 577K |
| 代理商： | MRF5P21240HR6 |
MRF5P21240HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2200
5
15
2080
50
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
@ Pout = 52 Watts Avg.
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, Pout = 52 W (Avg.), IDQ = 2200 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
30
5
10
15
20
INPUT
RETURN
LOSS
(dB)
IRL,
IM3
(dBc),
ACPR
(dBc)
25
2100
2120
2140
2160
2180
14
35
13
30
12
25
11
20
10
25
9
30
8
35
7
40
6
45
300
12
14
2
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
13.5
13
12.5
100
10
IDQ = 2640 mA
2420 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
2200 mA
1980 mA
1760 mA
300
55
25
2
IDQ = 2640 mA
2420 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,THIRD
ORDER
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
30
35
40
45
50
10
100
2200 mA
1980 mA
1760 mA
30
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
5th Order
3rd Order
30
35
40
45
50
110
46
50
60
36
Ideal
P3dB = 55.03 dBm (318.24 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 2200 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
59
58
57
56
55
54
53
52
51
37
38
39
40
41
42
43
44
45
P1dB = 54.36 dBm (272.9 W)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 2200 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5P21240R6 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5S18060N | 制造商:FREESCALE-SEMI 功能描述: |
| MRF5S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19060MBR1 | 功能描述:MOSFET RF N-CH 28V 12W TO-272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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