参数资料
型号: MRF5P21240HR6
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件页数: 7/12页
文件大小: 577K
代理商: MRF5P21240HR6
4
RF Device Data
Freescale Semiconductor
MRF5P21240HR6
Figure 2. MRF5P21240HR6 Test Circuit Component Layout
MRF5P21240 Rev. 5
CUT
OUT
AREA
C17
C15
C13 C9
C18
C16
C14 C10
R3
C6
B2 R2
R4
C5
B1 R1
C1
C2
C4
C3
C20
C19
C12
C8
C27
C28
C21
C22
C11
C7
C26
C25
C23
C24
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相关PDF资料
PDF描述
MRF5S19060MBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S19060NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相关代理商/技术参数
参数描述
MRF5P21240R6 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF5S18060N 制造商:FREESCALE-SEMI 功能描述:
MRF5S18060NBR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S18060NR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19060MBR1 功能描述:MOSFET RF N-CH 28V 12W TO-272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR