参数资料
型号: MRF5P21045NR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, 4 PIN
文件页数: 2/11页
文件大小: 417K
代理商: MRF5P21045NR1
10
RF Device Data
Freescale Semiconductor
MRF5P21045NR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
April 2007
Initial Release of Data Sheet
相关PDF资料
PDF描述
MRF5P21240HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19060MBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S19060NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相关代理商/技术参数
参数描述
MRF5P21180 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180HR5 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5P21180HR6 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5P21180HR6_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180R6 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor