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参数资料
| 型号： | MRF5P21045NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, 4 PIN |
| 文件页数： | 10/11页 |
| 文件大小： | 417K |
| 代理商： | MRF5P21045NR1 |
8
RF Device Data
Freescale Semiconductor
MRF5P21045NR1
Zo = 10 Ω
Zload
Zsource
f = 2220 MHz
f = 2060 MHz
f = 2220 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
f
MHz
Zsource
W
Zload
W
2060
8.01 - j6.68
4.38 - j4.62
2080
7.66 - j6.94
4.27 - j4.43
2100
7.26 - j7.20
4.12 - j4.04
2120
6.76 - j7.45
3.98 - j3.90
2140
6.28 - j7.71
3.81 - j3.69
2160
5.82 - j7.78
3.73 - j3.50
2180
5.37 - j7.85
3.65 - j3.30
2200
4.92 - j7.85
3.57 - j3.11
2220
4.46 - j7.97
3.49 - j2.92
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 17. Series Equivalent Source and Load Impedance — Single-Ended Configuration
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5P21180 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5P21180HR6 | 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5P21180HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180R6 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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