参数资料
型号: MRF377R3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN
文件页数: 7/11页
文件大小: 804K
代理商: MRF377R3
5-76
Freescale Semiconductor
Wireless RF Product Device Data
MRF377 MRF377R3 MRF377R5
TYPICAL NARROWBAND CHARACTERISTICS
2200 mA
100
16
19
10
Gps
Pout, OUTPUT POWER (WATTS) PEP
Figure 2. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18.5
18
17.5
17
16.5
100
70
20
10
IDQ = 1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
1600 mA
1800 mA
2000 mA
100
80
20
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
70
5th Order
3rd Order
η
100
5
45
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Drain Efficiency versus
Output Power
,DRAIN
EFFICIENCY
(%)
η
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
40
35
30
25
20
15
10
η
100
12
19
10
80
60
Gps
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18
40
17
20
16
0
15
20
14
40
13
60
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