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参数资料
| 型号： | MRF377R3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件页数： | 11/11页 |
| 文件大小： | 804K |
| 代理商： | MRF377R3 |
5-80
Freescale Semiconductor
Wireless RF Product Device Data
MRF377 MRF377R3 MRF377R5
TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
900
9
19
420
65
40
18
35
17
30
16
25
15
20
14
40
13
45
12
50
11
55
10
60
480
540
600
660
720
780
840
f, FREQUENCY (MHz)
Figure 9. Single-Channel DVBT OFDM
Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
η
Gps
ACPR
VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA
8K Mode DVBT OFDM
64 QAM Data Carrier Modulation
5 Symbols
50
16
19
2
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single-Channel DVBT OFDM Broadband
Performance Power Gain versus Output Power
G
ps
,POWER
GAIN
(dBc)
30
10
46
8
18.5
18
17.5
17
16.5
470 MHz
VDD = 32 Vdc, IDQ = 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
660 MHz
560 MHz
860 MHz
760 MHz
100
0
30
470 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Single-Channel DVBT OFDM
Broadband Performance Drain Efficiency versus
Output Power
,DRAIN
EFFICIENCY
(%)
η
VDD = 32 Vdc
IDQ = 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
10
25
20
15
10
5
660 MHz
560 MHz
860 MHz
760 MHz
100
68
56
10
470 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Single-Channel DVBT OFDM Broadband Performance
Adjacent Channel Power Ratio versus Output Power
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
VDD = 32 Vdc
IDQ = 2000 mA
8K Mode DVBT OFDM
64 QAM
Data Carrier Modulation
5 Symbols
58
60
62
64
66
660 MHz
860 MHz
560 MHz
760 MHz
5
20
5
7.61 MHz
f, FREQUENCY (MHz)
Figure 13. 8K Mode DVBT OFDM Spectrum
30
40
50
90
70
80
100
110
60
4
3
2
1
0
1
2
3
4
4 kHz BW
(dB)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF377R5 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| MRF3866G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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