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参数资料
| 型号： | MRF374A |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 367K |
| 代理商： | MRF374A |
6
RF Device Data
Freescale Semiconductor
MRF374A
TYPICAL CHARACTERISTICS
Figure 8. 8-VSB Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
Figure 9. Power Gain versus Peak Output Power
in Narrowband Circuit
Figure 10. Intermodulation Distortion versus
Peak Output Power in Narrowband Circuit
Figure 11. Drain Efficiency versus Peak Output Power
in Narrowband Circuit
Pout, OUTPUT POWER (WATTS) PEP
100
0
40
0.1
60
20
Gps
η
IMR
VDD = 32 Vdc
IDQ = 1.1 A
f = 860 MHz
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
35
25
30
25
35
20
40
15
45
10
50
5
55
10
1
13
19
IDQ = 1.0 A
800 mA
G
ps
,POWER
GAIN
(dB)
600 mA
400 mA
200 mA
18
17
16
15
14
100
55
20
1
IDQ = 200 mA
400 mA
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
25
30
35
40
45
50
10
600 mA
800 mA
1.0 A
100
0
50
1
VDD = 32 Vdc
IDQ = 800 mA
f = 857 MHz
40
30
20
10
INTERMODULA
TION
(dBc)
IMR,
,DRAIN
EFFICIENCY
(%)
η
D
100
110
VDD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
VDD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
Pout, OUTPUT POWER (WATTS) AVG.
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
相关PDF资料 |
PDF描述 |
|---|---|
| MRF374 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF374A_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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