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参数资料
| 型号： | MRF374A |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 367K |
| 代理商： | MRF374A |
2
RF Device Data
Freescale Semiconductor
MRF374A
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
70
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.41
0.45
Vdc
Dynamic Characteristics (1)
Input Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
97.3
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
49
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
1.91
—
pF
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17.3
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
36
41.2
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
-32.5
-28
dB
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF374A_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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