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参数资料
| 型号： | MRF372 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 507K |
| 代理商： | MRF372 |
MRF372 MRF372R5
5-51
Freescale Semiconductor
Wireless RF Product Device Data
TYPICAL TWO-TONE NARROWBAND CHARACTERISTICS
Figure 4. COFDM Performance (860 MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. 8-VSB Performance (860 MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Drain Efficiency versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
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VDD = 32 Vdc
IDQ = 800 mA
f1 = 857 MHz
f2 = 863 MHz
η
D
,DRAIN
EFFICIENCY
(%)
800 mA
IDQ = 400 mA
1.2 A
VDD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
1.6 A
800 mA
1.2 A
VDD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
IDQ = 1.6 A
G
ps
,POWER
GAIN
(dB)
IMR,
INTERMODULA
TION
RA
TIO
(dB)
,DRAIN
EFFICIENCY
(%)
h G
ps
,POWER
GAIN
(dB)
IMR
Gps
h
,DRAIN
EFFICIENCY
(%)
h G
ps
,POWER
GAIN
(dB)
IMR,
INTERMODULA
TION
RA
TIO
(dB)
IMR
Gps
h
VDD = 32 Vdc
IDQ = 1.6 A
6 dB Peak/Avg. Ratio
400 mA
VDD = 32 Vdc
IDQ = 1.6 A
2 K Mode 64 QAM
10 dB Peak/Avg. Ratio
Note:
IMR measured using Delta Marker Method.
Note:
IMR measured using Delta Marker Method.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF373R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373S | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF374A | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF372D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF372R3 | 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF372R5 | 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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