参数资料
型号: MRF372
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件页数: 3/11页
文件大小: 507K
代理商: MRF372
5-56
Freescale Semiconductor
Wireless RF Product Device Data
MRF372 MRF372R5
Figure 15. Broadband Series Equivalent Source and Load Impedance
f
MHz
Zsource
Zload
470
560
660
4.46 - j2.57
7.84 + j0.14
6.40 + j1.06
4.88 - j3.50
5.45 - j0.07
8.13 + j0.73
VDD = 32 V, IDQ = 1.0 A, Pout = 180 W PEP
760
860
6.25 + j0.31
6.67 + j0.46
8.27 - j1.00
7.52 + j0.02
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Zsource
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
Zo = 10
Zsource
f = 470 MHz
f = 860 MHz
Zload
Zo = 10
f = 470 MHz
f = 860 MHz
相关PDF资料
PDF描述
MRF373R1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF373SR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF373 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF373S UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF374A 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF372D 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
MRF372R3 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF372R5 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF373 制造商:Freescale Semiconductor 功能描述:
MRF373A 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors