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参数资料
| 型号： | MRF282SR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-200S, CASE 458B-03, 2 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 308K |
| 代理商： | MRF282SR1 |
2
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 μAdc)
VGS(th)
2.0
3.0
4.0
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
0.4
0.6
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
15
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
8.0
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.45
—
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
10.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
28
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
-14
-9
dB
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
10.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
28
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
-14
-9
dB
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Gps
9.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
η
35
40
—
%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF284 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284C | 制造商:Motorola Inc 功能描述:284C |
| MRF284LR1 | 制造商:Freescale Semiconductor 功能描述: |
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