参数资料
型号: MRF21045LSR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-400S, CASE 465F-04, 2 PIN
文件页数: 5/11页
文件大小: 473K
代理商: MRF21045LSR3
N
O
T
R
E
C
O
M
E
N
D
E
D
F
O
R
N
E
W
D
E
S
IG
N
O
T
R
E
C
O
M
E
N
D
E
D
F
O
R
N
E
W
D
E
S
IG
N
MRF21045LR3 MRF21045LSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) — continued
Two--Tone Common--Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
14.9
dB
Two--Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
36
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
--30
dBc
Two--Tone Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
--12
dB
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)
P1dB
50
W
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