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参数资料
| 型号： | MRF21045LSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-400S, CASE 465F-04, 2 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 473K |
| 代理商： | MRF21045LSR3 |
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MRF21045LR3 MRF21045LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical 2--carrier W--CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels
measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,
Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz
and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — --37.5 dBc
ACPR — --41 dBc
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large--Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°
C
Case Operating Temperature
TC
150
°
C
Operating Junction Temperature
TJ
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
1.65
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF21045
Rev. 12, 10/2008
Freescale Semiconductor
Technical Data
MRF21045LR3
MRF21045LSR3
2110--2170 MHz, 45 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF21045LR3
CASE 465F--04, STYLE 1
NI--400S
MRF21045LSR3
Freescale Semiconductor, Inc., 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21045LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21045S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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