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参数资料
| 型号： | MRF19125SR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 388K |
| 代理商： | MRF19125SR3 |
AR
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ARCHIVE
INFORMA
TION
MRF19125SR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
109
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
12
12.5
13
13.5
14
10
150
4
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
10
15
20
25
30
35
40
35
30
25
20
15
10
5
1920 1930
1940
1950
1960
1970
1980
1990 2000
IDQ = 1700 mA
1500 mA
900 mA
G
ps
,POWER
GAIN
(dB),
,DRAIN
EFFICIENCY
(%)
η
IMD
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
IRL,
IRL
Gps
100 kHz Tone Spacing
IDQ = 1300 mA
Figure 11. Intermodulation Distortion Products
versus Two-Tone Tone Spacing
25
100
1000
5000
Df, TONE SPACING (kHz)
30
35
40
45
50
55
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
VDD = 26 Vdc
Pout = 125 W (PEP)
100
1300 mA
1100 mA
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
7th Order
5th Order
3rd Order
Figure 12. MTTF Factor versus Junction Temperature
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