- 您现在的位置：买卖IC网 > PDF目录98036 > MRF19125R3 (MOTOROLA INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF19125R3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 396K |
| 代理商： | MRF19125R3 |
MRF19125R3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
55
50
45
40
35
30
25
20
10
150
4
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS Avg.) NCDMA
IM3
(dBc),
ACPR
(dBc)
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
,DRAIN
EFFICIENCY
(%)
η
Figure 6. 2-Carrier N-CDMA Broadband
Performance
Figure 7. CW Performance
0
5
10
15
20
25
30
70
63
56
49
42
35
28
110
40
VDD = 26 Vdc, IDQ = 1300 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
70
60
50
40
30
20
5
11
23
29
35
41
10
150
η
4
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc),
IRL,
1100 mA
1700 mA
1300 mA
IDQ = 900 mA
1500 mA
12
14
16
18
20
22
24
60
50
40
30
20
10
0
1930
1940
1950
1960
1970
1980
2000
VDD = 26 Vdc
Pout = 24 Watts (Avg.)
IDQ = 1300 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
Gps
ACPR
η
IRL
Pout, OUTPUT POWER (WATTS)
,INPUT
POWER
(W
A
TTS),
G
ps
,POWER
GAIN
(dB)
P
in
0
2
4
6
8
10
12
14
0
8
16
24
32
40
48
56
10
100
2
200
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
Gps
P in
η
,DRAIN
EFFICIENCY
(%)
η
IM3
Gps
ACPR
17
100
80
7th Order
5th Order
3rd Order
100
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
1920
1990
IM3
33
34
35
36
37
38
32
31
30
29
28
27
24
24.5
25
25.5
26
26.5
27
27.5
28
VDD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
IMD
32
33
相关PDF资料 |
PDF描述 |
|---|---|
| MRF19125SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF19125R5 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19125S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF19125SR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1946 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF1946A | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。