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参数资料
| 型号： | MRF19085LR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 403K |
| 代理商： | MRF19085LR3 |
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INF
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ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
TYPICAL CHARACTERISTICS
55
50
45
40
35
30
25
20
10
100
4
Figure 3. 2-Carrier N-CDMA Spectrum
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 5. Intermodulation Distortion
Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation
Distortion versus Output Power and IDQ
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS Avg.) NCDMA
IM3
(dBc),
ACPR
(dBc)
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
,DRAIN
EFFICIENCY
(%)
η
Figure 7. 2-Carrier N-CDMA Broadband Performance
Figure 8. CW Performance
0
5
10
15
20
25
30
70
63
56
49
42
35
28
110
30
0.5
IM3
Gps
ACPR
η
VDD = 26 Vdc, IDQ = 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
70
60
50
40
30
20
0
10
20
30
40
50
10
100
3rd Order
η
4
5th Order
7th Order
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc),
IRL,
1150 mA
850 mA
700 mA
IDQ = 550 mA
1000 mA
12
14
16
18
20
22
24
60
50
40
30
20
10
0
1930
1940
1950
1960
1970
1980
1990
VDD = 26 V
Pout = 18 W Avg.
IDQ = 850 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
IM3
Gps
ACPR
η
IRL
Pout, OUTPUT POWER (WATTS)
,INPUT
POWER
(W
A
TTS),
G
ps
,POWER
GAIN
(dB)
P
in
0
2
4
6
8
10
12
14
5
12
19
26
33
40
47
54
10
100
2
140
VDD = 26 V
IDQ = 850 mA
f = 1960 MHz
Gps
P in
η
,DRAIN
EFFICIENCY
(%)
η
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
VDD = 26 Vdc
IDQ = 850 mA
f1 = 1960 MHz
100 kHz Tone Spacing
f, FREQUENCY (MHz)
100
0
10
20
30
40
50
60
70
80
90
ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
1.5
3
4.5
6
7.5
(dB)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF19085LR5 | 功能描述:IC MOSFET RF N-CHAN NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085LSR3 | 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19085SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090 | 制造商:Motorola Inc 功能描述: |
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