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参数资料
| 型号： | MRF175GV |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 375-04, 4 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 214K |
| 代理商： | MRF175GV |
Figure 8. Power Input versus Power Output
Figure 9. Output Power versus Supply Voltage
TYPICAL CHARACTERISTICS
MRF175GV
Figure 10. Output Power versus Supply Voltage
Figure 11. Output Power versus Input Power
MRF175GU
Figure 12. Power Gain versus Frequency
MRF175GV
P
,POWER
OUTPUT
(W
ATTS)
out
P
,OUTPUT
POWER
(W
ATTS)
out
P
,OUTPUT
POWER
(W
ATTS)
out
P
,OUTPUT
POWER
(W
ATTS)
out
0
Pin, POWER INPUT (WATTS)
12
24
300
200
100
0
VDD = 28 V
IDQ = 2 x 100 mA
f = 225 MHz
VDD, SUPPLY VOLTAGE (VOLTS)
12
320
0
14
16
18
20
22
24
26
28
280
240
200
160
120
80
40
8 W
Pin = 12 W
4 W
VDD, SUPPLY VOLTAGE (VOLTS)
12
200
14
16
18
20
22
24
26
28
180
0
160
120
80
40
140
100
60
20
Pin = 14 W
10 W
6 W
Pin, INPUT POWER (WATTS)
0
200
510
15
20
25
180
0
160
120
80
40
140
100
60
20
VDS = 28 V
IDQ = 2 x 100 mA
f = 400 MHz
500 MHz
POWER
GAIN
(dB)
f, FREQUENCY (MHz)
30
5
10
20
50
100
200
500
25
20
15
10
5
Pout = 200 W
VDS = 28 V
IDQ = 2 x 100 mA
150 W
IDQ = 2 x 100 mA
f = 225 MHz
f = 400 MHz
5
REV 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF175LU | 功能描述:射频MOSFET电源晶体管 400MHz 28Volt 100W Gain 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF175LV | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
| MRF176 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176GU | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF176GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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