参数资料
型号: MRF175GV
元件分类: 功率晶体管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 375-04, 4 PIN
文件页数: 6/11页
文件大小: 214K
代理商: MRF175GV
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
Figure 4. DC Safe Operating Area
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 6. Gate–Source Voltage versus
Case Temperature
TYPICAL CHARACTERISTICS
Figure 7. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF175GU/GV.
f,
UNITY
GAIN
FREQUENCY
(MHz)
T
I D
,DRAIN
CURRENT
(AMPS)
V GS
,GA
TESOURCE
VOL
TAGE
(NORMALIZED)
I D
,DRAIN
CURRENT
(AMPS)
C,
CAP
ACIT
ANCE
(pF)
4000
3000
2000
1000
0
20
18
16
14
12
10
8
6
4
2
0
ID, DRAIN CURRENT (AMPS)
VDS = 10 V
VDS = 20 V
100
10
1
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
10
1
100
TC = 25°C
1
VGS, GATE-SOURCE VOLTAGE (VOLTS)
1
2
3
4
5
23
4
5
6
VDS = 10 V
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
-25
TC, CASE TEMPERATURE (°C)
1.2
0
25
50
75
100
125
150
175
1.1
1
0.9
0.8
VDD = 28 V
ID = 4 A
3 A
2 A
100 mA
1000
5
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
10
15
20
25
500
200
100
10
20
50
Ciss
Crss
Coss
VGS = 0 V
f = 1 MHz
4
REV 8
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