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参数资料
| 型号： | MRF1570FNT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC, CASE 1366A-02, TO-272, 8 PIN |
| 文件页数： | 19/20页 |
| 文件大小： | 437K |
| 代理商： | MRF1570FNT1 |
MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS, 400 - 470 MHZ
80
5
17
0
Pout, OUTPUT POWER (WATTS)
Figure 15. Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
400 MHz
VDD = 12.5 Vdc
440 MHz
470 MHz
15
13
11
9
7
10
20
30
40
50
60
70
80
0
70
0
Pout, OUTPUT POWER (WATTS)
Figure 16. Drain Efficiency versus Output Power
,DRAIN
EFFICIENCY
(%)
η
60
50
40
30
20
10
20
30
40
50
60
70
400 MHz
VDD = 12.5 Vdc
440 MHz
470 MHz
1600
50
90
400
IDQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Biasing Current
P
out
,
OUTPUT
POWER
(W
A
TTS)
VDD = 12.5 Vdc
Pin = 38 dBm
400 MHz
440 MHz
470 MHz
80
70
60
600
800
1000
1200
1400
0
100
Figure 18. Drain Efficiency versus Biasing Current
,DRAIN
EFFICIENCY
(%)
η
VDD = 12.5 Vdc
Pin = 38 dBm
400 MHz
440 MHz
470 MHz
1600
400
IDQ, BIASING CURRENT (mA)
600
800
1000
1200
1400
80
60
40
20
40
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 19. Output Power versus Supply Voltage
P out
,
OUTPUT
POWER
(W
A
TTS)
Pin = 38 dBm
IDQ = 800 mA
400 MHz
440 MHz
470 MHz
90
80
70
60
50
11
12
13
14
15
Figure 20. Drain Efficiency versus Supply Voltage
,DRAIN
EFFICIENCY
(%)
η
0
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 38 dBm
IDQ = 800 mA
400 MHz
440 MHz
470 MHz
80
40
60
20
11
12
13
14
15
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1570NT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1570T1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570NT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570FNT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570T1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1570FT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF1570N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS TO272-6N FORMED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1570NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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