参数资料
型号: MPSW63RLRA
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AE, 3 PIN
文件页数: 12/34页
文件大小: 337K
代理商: MPSW63RLRA
MPSW63 MPSW64
2–711
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPSW63
MPSW64
(IC = –100 mAdc, VCE = –5.0 Vdc)
MPSW63
MPSW64
hFE
5,000
10,000
20,000
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –0.1 mAdc)
VCE(sat)
–1.5
Vdc
Base–Emitter On Voltage
(IC = –100 mAdc, VCE = –5.0 Vdc)
VBE(on)
–2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
125
MHz
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| ftest.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
–1.0
–2.0
–0.5
IC, COLLECTOR CURRENT (mA)
200
50
5.0
3.0
2.0
–1.0
–100
–0.3
IC, COLLECTOR CURRENT (mA)
–1.6
–2.0
–0.8
–0.4
0
IB, BASE CURRENT (mA)
–0.6
–30
h
FE
,DC
CURRENT
GAIN
(X1.0
k)
V
,VOL
TAGE
(VOL
TS)
–10
–20
–7.0
–100
–200
–50
70
–3.0 –5.0
–10
–50
–2.0
–1.6
–1.4
–1.2
–1.0
–30
–70
–300
–5.0
–3.0
–0.7
30
100
–300
–1.2
–0.3
–100
–0.1
–1.0 –3.0
–10
–30
–300
–1 k
V
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
CE
–0.3
10
7.0
20
–0.5
–3 k –10 k
–0.8
–1.8
TJ = 25°C
IC = –10 mA
–50 mA –100 mA –175 mA
–300 mA
TJ = 25°C
IC/IB = 100
TJ = 125°C
25
°C
–55
°C
–10 V
VCE = –2.0 V
–5.0 V
VBE(sat) @ IC/IB = 100
VCE(sat) @ IC/IB = 1000
VBE(on) @ VCE = –5.0 V
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