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参数资料
| 型号： | MKI80-06T6K |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT H-BRIDGE 600V 89A E1 |
| 标准包装： | 10 |
| IGBT 类型： | 沟道 |
| 配置： | 全桥反相器 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.3V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 89A |
| 电流 - 集电极截止（最大）： | 500µA |
| Vce 时的输入电容 (Cies)： | 4.62nF @ 25V |
| 功率 - 最大： | 210W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E1 |
| 供应商设备封装： | E1 |
MKI 80-06T6K
IGBTs
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
600
±20
±30
89
67
210
Unit
V
V
V
A
A
W
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 75 A; V GE = 15 V
I C = 1.2 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
5
1.8
2.1
1
2.3
6.5
0.5
V
V
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V CE = 0 V; V GE = ±20 V
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 480 V; V GE = 15 V; I C = 75 A
4620
470
400
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V CE = 300 V; I C = 75 A
V GE = ±15 V; R G = 5.1 W
T VJ = 125°C
30
20
250
70
2.5
2.8
ns
ns
ns
ns
mJ
mJ
I CM
V CEK
reverse bias safe operating area
RBSOA; V GE = ±15 V; R G = 5.1 W ; L = 100 μH
clamped inductive load; T VJ = 125°C
150
0.9x V CES
A
t SC
(SCSOA)
R thJC
R thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
V CE = 480 V; V GE = ±15 V;
R G = 5.1 W ; non-repetitive
(per IGBT)
(per IGBT)
T VJ = 125°C
6
0.2
0.6
μs
K/W
K/W
Diodes
Symbol
Definitions
Conditions
Maximum Ratings
V RRM
max. repetitive reverse voltage
600
V
I F25
I F80
forward current
T C = 25°C
T C = 80°C
105
67
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V F
forward voltage
I F = 75 A
T VJ = 25°C
T VJ = 125°C
1.8
1.6
2.2
V
V
I RM
t rr
R thJC
R thCH
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
V R = 300 V; I F = 75 A
di F /dt = -600 A/μs
(per diode)
(per diode)
T VJ = 100°C
T VJ = 25°C
36
100
0.25
0.65
A
ns
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2012 IXYS All rights reserved
20120410c
2-5
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