参数资料
型号: MG200J6ES61
厂商: Powerex Inc
文件页数: 2/4页
文件大小: 0K
描述: IGBT MOD CMPCT 600V 200A
标准包装: 1
系列: IGBTMOD™
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,200A
电流 - 集电极 (Ic)(最大): 200A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 40nF @ 10V
功率 - 最大: 1000W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG200J6ES61
SIX IGBTMOD?
COMPACT IGBT SERIES MODULE
200 AMPERES/600 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25°C unless otherwise speci?ed
Characteristics
POWER DEVICE JUNCTION TEMPERATURE
STORAGE TEMPERATURE
MOUNTING TORQUE, M5 MOUNTING SCREWS
MOUNTING TORQUE, M5 MAIN TERMINAL SCREWS
MODULE WEIGHT (TYPICAL)
ISOLATION VOLTAGE, AC 1 MINUTE, 60HZ SINUSOIDAL
Symbol
T J
T STG
V ISO
MG200J6ES61
-20 TO 150
-40 TO 125
31
31
375
2500
Units
°C
°C
IN-LB
IN-LB
GRAMS
VOLTS
IGBT INVERTER SECTOR
COLLECTOR-EMITTER VOLTAGE (V D = 15V, V CIN = 15V)
GATE-EMITTER VOLTAGE
COLLECTOR CURRENT (T C = 25°C)
PEAK COLLECTOR CURRENT (T C = 25°C)
EMITTER CURRENT (T C = 25°C)
PEAK EMITTER CURRENT (T C = 25°C)
COLLECTOR DISSIPATION (T C = 25°C)
V CES
V GES
I C
I CP
I E
I EM
P C
600
±20
200
400
200
400
1000
VOLTS
VOLTS
AMPERES
AMPERES
AMPERES
AMPERES
WATTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT INVERTER SECTOR
GATE LEAKAGE CURRENT
COLLECTOR-EMITTER CUTOFF CURRENT
GATE-EMITTER CUTOFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
INDUCTIVE LOAD
SWITCHING
TIMES
REVERSE RECOVERY TIME
EMITTER-COLLECTOR VOLTAGE
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
T D(ON)
T OFF
T F
T RR
V EC
V GE = 20V, V CE = 0V
V GE = 0V, V CE = 600V
V CE = 5V, I C = 200MA
V GE = 15V, I C = 200A, T J = 25°C
V GE = 15V, I C = 200A, T J = 125°C
V CE = 10V, V GE = 0V, F = 1MHZ
V CC = 300V, I C = 200A,
V GE = ±15V, R G = 10 Ω
I E = 200A
5.0
6.5
2.0
40,000
2.2
±500
1.0
8.0
2.4
2.6
1.0
1.2
0.5
0.3
2.6
NA
MA
VOLTS
VOLTS
VOLTS
PF
μS
μS
μS
μS
VOLTS
THERMAL CHARACTERISTICS
Characteristic
ZERO POWER RESISTANCE
B VALUE
JUNCTION TO CASE THERMAL RESISTANCE
CONTACT THERMAL RESISTANCE
Symbol
R25
B25/85
R TH(J-C)Q
R TH(J-C)D
R TH(C-F)
Condition
I TM = 0.2MA
T C = 25°C/T C = 85°C
IGBT (PER 1/6 MODULE)
FWDI (PER 1/6 MODULE)
Min.
Typ.
100
4390
0.05
Max.
0.125
0.195
Units
K Ω
K
°C/WATT
°C/WATT
°C/WATT
RECOMMENDED CONDITIONS FOR USE
Characteristic
SUPPLY VOLTAGE
Symbol
V CC
Condition
APPLIED ACROSS P-N TERMINALS
Value
≤ 400
Units
VOLTS
GATE VOLTAGE
V GE
13.5 ^ 16.5 VOLTS
SWITCHING FREQUENCY
F C
0 ^ 20
KHZ
2
5/05
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